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Black Phosphorus Quantum Dots with Tunable Memory Properties and Multilevel Resistive Switching Characteristics
Solution‐processed black phosphorus quantum‐dot‐based resistive random access memory is demonstrated with tunable characteristics, multilevel data storage, and ultrahigh ON/OFF ratio. Effects of the black phosphorous quantum dots layer thickness and the compliance current setting on resistive switch...
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| Publicado no: | Adv Sci (Weinh) |
|---|---|
| Main Authors: | , , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
John Wiley and Sons Inc.
2017
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5566243/ https://ncbi.nlm.nih.gov/pubmed/28852609 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1002/advs.201600435 |
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