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Black Phosphorus Quantum Dots with Tunable Memory Properties and Multilevel Resistive Switching Characteristics

Solution‐processed black phosphorus quantum‐dot‐based resistive random access memory is demonstrated with tunable characteristics, multilevel data storage, and ultrahigh ON/OFF ratio. Effects of the black phosphorous quantum dots layer thickness and the compliance current setting on resistive switch...

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Detalhes bibliográficos
Publicado no:Adv Sci (Weinh)
Main Authors: Han, Su‐Ting, Hu, Liang, Wang, Xiandi, Zhou, Ye, Zeng, Yu‐Jia, Ruan, Shuangchen, Pan, Caofeng, Peng, Zhengchun
Formato: Artigo
Idioma:Inglês
Publicado em: John Wiley and Sons Inc. 2017
Assuntos:
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC5566243/
https://ncbi.nlm.nih.gov/pubmed/28852609
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1002/advs.201600435
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