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Frequency-Stable Ionic-Type Hybrid Gate Dielectrics for High Mobility Solution-Processed Metal-Oxide Thin-Film Transistors
In this paper, we demonstrate high mobility solution-processed metal-oxide thin-film transistors (TFTs) by using a high-frequency-stable ionic-type hybrid gate dielectric (HGD). The HGD gate dielectric, a blend of sol-gel aluminum oxide (AlO(x)) and poly(4-vinylphenol) (PVP), exhibited high dielectr...
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| Publicat a: | Materials (Basel) |
|---|---|
| Autors principals: | , , , , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
MDPI
2017
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5553520/ https://ncbi.nlm.nih.gov/pubmed/28772972 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma10060612 |
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