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III-Nitride Digital Alloy: Electronics and Optoelectronics Properties of the InN/GaN Ultra-Short Period Superlattice Nanostructures

The III-Nitride digital alloy (DA) is comprehensively studied as a short-period superlattice nanostructure consisting of ultra-thin III-Nitride epitaxial layers. By stacking the ultra-thin III-Nitride epitaxial layers periodically, these nanostructures are expected to have comparable optoelectronic...

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Bibliografske podrobnosti
izdano v:Sci Rep
Main Authors: Sun, Wei, Tan, Chee-Keong, Tansu, Nelson
Format: Artigo
Jezik:Inglês
Izdano: Nature Publishing Group UK 2017
Teme:
Online dostop:https://ncbi.nlm.nih.gov/pmc/articles/PMC5532268/
https://ncbi.nlm.nih.gov/pubmed/28751673
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-017-06889-3
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