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AlN/GaN Digital Alloy for Mid- and Deep-Ultraviolet Optoelectronics
The AlN/GaN digital alloy (DA) is a superlattice-like nanostructure formed by stacking ultra-thin ( ≤ 4 monolayers) AlN barriers and GaN wells periodically. Here we performed a comprehensive study on the electronics and optoelectronics properties of the AlN/GaN DA for mid- and deep-ultraviolet (UV)...
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| 發表在: | Sci Rep |
|---|---|
| Main Authors: | , , |
| 格式: | Artigo |
| 語言: | Inglês |
| 出版: |
Nature Publishing Group UK
2017
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| 主題: | |
| 在線閱讀: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5605682/ https://ncbi.nlm.nih.gov/pubmed/28928372 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-017-12125-9 |
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