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Investigation of the Optoelectronic Properties of Ti-doped Indium Tin Oxide Thin Film
In this study, direct-current magnetron sputtering was used to fabricate Ti-doped indium tin oxide (ITO) thin films. The sputtering power during the 350-nm-thick thin-film production process was fixed at 100 W with substrate temperatures increasing from room temperature to 500 °C. The Ti-doped ITO t...
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| Publicado no: | Materials (Basel) |
|---|---|
| Main Authors: | , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
MDPI
2015
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5512923/ https://ncbi.nlm.nih.gov/pubmed/28793575 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma8095316 |
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