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Indium Saving Indium Tin Oxide Thin Films Deposited by Sputtering at Room Temperature

<p><span>Indium saving indium tin oxide ITO thin films have been deposited using a sputtering deposition technique in pure Ar and in mixed argon-oxygen atmosphere at room temperature. A transmittance value of more than 85 % in the visible region of the spectrum and a resistivity of 2420...

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Bibliografische gegevens
Hoofdauteurs: Leandro Voisin, Makoto Ohtsuka, Svitlana Petrovska, Bogdan Ilkiv, Ruslan Sergiienko, Takashi Nakamura
Formaat: Artigo
Taal:Inglês
Gepubliceerd in: Vasyl Stefanyk Precarpathian National University 2018-01-01
Reeks:Фізика і хімія твердого тіла
Online toegang:http://journals.pu.if.ua/index.php/pcss/article/view/2253
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