Učitavanje...
Conduction Mechanisms in Resistance Switching Memory Devices Using Transparent Boron Doped Zinc Oxide Films
In this work, metal/oxide/metal capacitors were fabricated and investigated using transparent boron doped zinc oxide (ZnO:B) films for resistance switching memory applications. The optical band gap of ZnO:B films was determined to be about 3.26 eV and the average value of transmittance of ZnO:B film...
Spremljeno u:
| Izdano u: | Materials (Basel) |
|---|---|
| Glavni autor: | |
| Format: | Artigo |
| Jezik: | Inglês |
| Izdano: |
MDPI
2014
|
| Teme: | |
| Online pristup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5512638/ https://ncbi.nlm.nih.gov/pubmed/28788250 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma7117339 |
| Oznake: |
Dodaj oznaku
Bez oznaka, Budi prvi tko označuje ovaj zapis!
|