Transparent conducting zinc-co-doped ITO films prepared by magnetron sputtering

Zn-co-doped ITO films have been prepared by dc magnetron sputtering using powder targets. Zn-co-doped ITO films with a practical etching rate as well as a low resistivity were obtained; in particular, etching rate could be controlled by varying the Zn content doped into ITO. In addition, a resistivi...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Superficies y vacío
Hauptverfasser: Tadatsugu Minami, Takashi Yamamoto, Hidenobu Toda, Toshihiro Miyata
Format: Artigo
Sprache:Inglês
Veröffentlicht: Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. 1999
Schlagworte:
Física, Astronomía y Matemáticas
ITO
Zn co
doped ITO
thin films
etching rate
Online Zugang:https://www.redalyc.org/articulo.oa?id=94200917
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