Llwytho...
Strong Photoluminescence Enhancement of Silicon Oxycarbide through Defect Engineering
The following study focuses on the photoluminescence (PL) enhancement of chemically synthesized silicon oxycarbide (SiC(x)O(y)) thin films and nanowires through defect engineering via post-deposition passivation treatments. SiC(x)O(y) materials were deposited via thermal chemical vapor deposition (T...
Wedi'i Gadw mewn:
| Cyhoeddwyd yn: | Materials (Basel) |
|---|---|
| Prif Awduron: | , , , |
| Fformat: | Artigo |
| Iaith: | Inglês |
| Cyhoeddwyd: |
MDPI
2017
|
| Pynciau: | |
| Mynediad Ar-lein: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5506893/ https://ncbi.nlm.nih.gov/pubmed/28772802 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma10040446 |
| Tagiau: |
Ychwanegu Tag
Dim Tagiau, Byddwch y cyntaf i dagio'r cofnod hwn!
|