A carregar...

Strong Photoluminescence Enhancement of Silicon Oxycarbide through Defect Engineering

The following study focuses on the photoluminescence (PL) enhancement of chemically synthesized silicon oxycarbide (SiC(x)O(y)) thin films and nanowires through defect engineering via post-deposition passivation treatments. SiC(x)O(y) materials were deposited via thermal chemical vapor deposition (T...

ver descrição completa

Na minha lista:
Detalhes bibliográficos
Publicado no:Materials (Basel)
Main Authors: Ford, Brian, Tabassum, Natasha, Nikas, Vasileios, Gallis, Spyros
Formato: Artigo
Idioma:Inglês
Publicado em: MDPI 2017
Assuntos:
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC5506893/
https://ncbi.nlm.nih.gov/pubmed/28772802
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma10040446
Tags: Adicionar Tag
Sem tags, seja o primeiro a adicionar uma tag!