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Strong Photoluminescence Enhancement of Silicon Oxycarbide through Defect Engineering
The following study focuses on the photoluminescence (PL) enhancement of chemically synthesized silicon oxycarbide (SiC(x)O(y)) thin films and nanowires through defect engineering via post-deposition passivation treatments. SiC(x)O(y) materials were deposited via thermal chemical vapor deposition (T...
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| Publicado no: | Materials (Basel) |
|---|---|
| Main Authors: | , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
MDPI
2017
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5506893/ https://ncbi.nlm.nih.gov/pubmed/28772802 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma10040446 |
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