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Schottky Barrier Height Tuning via the Dopant Segregation Technique through Low-Temperature Microwave Annealing
The Schottky junction source/drain structure has great potential to replace the traditional p/n junction source/drain structure of the future ultra-scaled metal-oxide-semiconductor field effect transistors (MOSFETs), as it can form ultimately shallow junctions. However, the effective Schottky barrie...
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| Udgivet i: | Materials (Basel) |
|---|---|
| Main Authors: | , , , , , , , , |
| Format: | Artigo |
| Sprog: | Inglês |
| Udgivet: |
MDPI
2016
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| Fag: | |
| Online adgang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5503036/ https://ncbi.nlm.nih.gov/pubmed/28773440 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma9050315 |
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