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Bismuth Quantum Dots in Annealed GaAsBi/AlAs Quantum Wells
Formation of bismuth nanocrystals in GaAsBi layers grown by molecular beam epitaxy at 330 °C substrate temperature and post-growth annealed at 750 °C is reported. Superlattices containing alternating 10 nm-thick GaAsBi and AlAs layers were grown on semi-insulating GaAs substrate. AlAs layers have se...
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| Publicado no: | Nanoscale Res Lett |
|---|---|
| Main Authors: | , , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Springer US
2017
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5493604/ https://ncbi.nlm.nih.gov/pubmed/28673054 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-017-2205-7 |
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