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Three-dimensional crossbar arrays of self-rectifying Si/SiO(2)/Si memristors
Memristors are promising building blocks for the next-generation memory and neuromorphic computing systems. Most memristors use materials that are incompatible with the silicon dominant complementary metal-oxide-semiconductor technology, and require external selectors in order for large memristor ar...
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| Publicado no: | Nat Commun |
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| Main Authors: | , , , , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group
2017
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5465358/ https://ncbi.nlm.nih.gov/pubmed/28580928 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/ncomms15666 |
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