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Boron Partitioning Coefficient above Unity in Laser Crystallized Silicon
Boron pile-up at the maximum melt depth for laser melt annealing of implanted silicon has been reported in numerous papers. The present contribution examines the boron accumulation in a laser doping setting, without dopants initially incorporated in the silicon wafer. Our numerical simulation models...
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| Veröffentlicht in: | Materials (Basel) |
|---|---|
| Hauptverfasser: | , , |
| Format: | Artigo |
| Sprache: | Inglês |
| Veröffentlicht: |
MDPI
2017
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| Schlagworte: | |
| Online Zugang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5459181/ https://ncbi.nlm.nih.gov/pubmed/28772548 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma10020189 |
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