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High Responsivity MgZnO Ultraviolet Thin-Film Phototransistor Developed Using Radio Frequency Sputtering
We investigated the electrical and optoelectronic properties of a magnesium zinc oxide thin-film phototransistor. We fabricate an ultraviolet phototransistor by using a wide-bandgap MgZnO thin film as the active layer material of the thin film transistor (TFT). The fabricated device demonstrated a t...
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| Publicat a: | Materials (Basel) |
|---|---|
| Autors principals: | , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
MDPI
2017
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5459180/ https://ncbi.nlm.nih.gov/pubmed/28772487 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma10020126 |
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