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High Responsivity MgZnO Ultraviolet Thin-Film Phototransistor Developed Using Radio Frequency Sputtering
We investigated the electrical and optoelectronic properties of a magnesium zinc oxide thin-film phototransistor. We fabricate an ultraviolet phototransistor by using a wide-bandgap MgZnO thin film as the active layer material of the thin film transistor (TFT). The fabricated device demonstrated a t...
Wedi'i Gadw mewn:
| Cyhoeddwyd yn: | Materials (Basel) |
|---|---|
| Prif Awduron: | , , , |
| Fformat: | Artigo |
| Iaith: | Inglês |
| Cyhoeddwyd: |
MDPI
2017
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| Pynciau: | |
| Mynediad Ar-lein: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5459180/ https://ncbi.nlm.nih.gov/pubmed/28772487 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma10020126 |
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