Electrical Properties and Interfacial Studies of Hf(x)Ti(1–x)O(2) High Permittivity Gate Insulators Deposited on Germanium Substrates

In this research, the hafnium titanate oxide thin films, Ti(x)Hf(1–x)O(2), with titanium contents of x = 0, 0.25, 0.9, and 1 were deposited on germanium substrates by atomic layer deposition (ALD) at 300 °C. The approximate deposition rates of 0.2 Å and 0.17 Å per cycle were obtained for titanium ox...

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Detalhes bibliográficos
Publicado no:Materials (Basel)
Main Authors: Lu, Qifeng, Mu, Yifei, Roberts, Joseph W., Althobaiti, Mohammed, Dhanak, Vinod R., Wu, Jingjin, Zhao, Chun, Zhao, Ce Zhou, Zhang, Qian, Yang, Li, Mitrovic, Ivona Z., Taylor, Stephen, Chalker, Paul R.
Formato: Artigo
Idioma:Inglês
Publicado em: MDPI 2015
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Article
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC5458814/
https://ncbi.nlm.nih.gov/pubmed/28793705
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma8125454
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