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Next Generation Device Grade Silicon-Germanium on Insulator
High quality single crystal silicon-germanium-on-insulator has the potential to facilitate the next generation of photonic and electronic devices. Using a rapid melt growth technique we engineer tailored single crystal silicon-germanium-on-insulator structures with near constant composition over lar...
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| 出版年: | Sci Rep |
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| 主要な著者: | , , , , , , |
| フォーマット: | Artigo |
| 言語: | Inglês |
| 出版事項: |
Nature Publishing Group
2015
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| 主題: | |
| オンライン･アクセス: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4319176/ https://ncbi.nlm.nih.gov/pubmed/25656076 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep08288 |
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