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Next Generation Device Grade Silicon-Germanium on Insulator

High quality single crystal silicon-germanium-on-insulator has the potential to facilitate the next generation of photonic and electronic devices. Using a rapid melt growth technique we engineer tailored single crystal silicon-germanium-on-insulator structures with near constant composition over lar...

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Bibliografiske detaljer
Udgivet i:Sci Rep
Main Authors: Littlejohns, Callum G., Nedeljkovic, Milos, Mallinson, Christopher F., Watts, John F., Mashanovich, Goran Z., Reed, Graham T., Gardes, Frederic Y.
Format: Artigo
Sprog:Inglês
Udgivet: Nature Publishing Group 2015
Fag:
Online adgang:https://ncbi.nlm.nih.gov/pmc/articles/PMC4319176/
https://ncbi.nlm.nih.gov/pubmed/25656076
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep08288
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