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Lanthanum Gadolinium Oxide: A New Electronic Device Material for CMOS Logic and Memory Devices
A comprehensive study on the ternary dielectric, LaGdO(3), synthesized and qualified in our laboratory as a novel high-k dielectric material for logic and memory device applications in terms of its excellent features that include a high linear dielectric constant (k) of ~22 and a large energy bandga...
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| 出版年: | Materials (Basel) |
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| 主要な著者: | , , |
| フォーマット: | Artigo |
| 言語: | Inglês |
| 出版事項: |
MDPI
2014
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| 主題: | |
| オンライン･アクセス: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5453369/ https://ncbi.nlm.nih.gov/pubmed/28788589 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma7042669 |
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