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Characterization of High-k Nanolayers by Grazing Incidence X-ray Spectrometry

The accurate characterization of nanolayered systems is an essential topic for today’s developments in many fields of material research. Thin high-k layers and gate stacks are technologically required for the design of current and future electronic devices and can be deposited, e.g., by Atomic Layer...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Veröffentlicht in:Materials (Basel)
Hauptverfasser: Müller, Matthias, Hönicke, Philipp, Detlefs, Blanka, Fleischmann, Claudia
Format: Artigo
Sprache:Inglês
Veröffentlicht: MDPI 2014
Schlagworte:
Online Zugang:https://ncbi.nlm.nih.gov/pmc/articles/PMC5453343/
https://ncbi.nlm.nih.gov/pubmed/28788611
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma7043147
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