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Layer-dependent semiconductor-metal transition of SnO/Si(001) heterostructure and device application
As the downscaling of electronic devices continues, the problems of leakage currents and heat dissipation become more and more serious. To address these issues, new materials and new structures are explored. Here, we propose an interesting heterostructure made of ultrathin SnO layers on Si(001) surf...
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| Publicat a: | Sci Rep |
|---|---|
| Autors principals: | , , , , , , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Nature Publishing Group UK
2017
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5451440/ https://ncbi.nlm.nih.gov/pubmed/28566756 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-017-02832-8 |
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