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Layer-dependent semiconductor-metal transition of SnO/Si(001) heterostructure and device application

As the downscaling of electronic devices continues, the problems of leakage currents and heat dissipation become more and more serious. To address these issues, new materials and new structures are explored. Here, we propose an interesting heterostructure made of ultrathin SnO layers on Si(001) surf...

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Dades bibliogràfiques
Publicat a:Sci Rep
Autors principals: Xiao, Chengcheng, Wang, Fang, Wang, Yao, Yang, Shengyuan A., Jiang, Jianzhong, Yang, Ming, Lu, Yunhao, Wang, Shijie, Feng, Yuanping
Format: Artigo
Idioma:Inglês
Publicat: Nature Publishing Group UK 2017
Matèries:
Accés en línia:https://ncbi.nlm.nih.gov/pmc/articles/PMC5451440/
https://ncbi.nlm.nih.gov/pubmed/28566756
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-017-02832-8
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