Layer-dependent semiconductor-metal transition of SnO/Si(001) heterostructure and device application

As the downscaling of electronic devices continues, the problems of leakage currents and heat dissipation become more and more serious. To address these issues, new materials and new structures are explored. Here, we propose an interesting heterostructure made of ultrathin SnO layers on Si(001) surf...

Deskribapen osoa

Gorde:
Xehetasun bibliografikoak
Argitaratua izan da:Sci Rep
Egile Nagusiak: Xiao, Chengcheng, Wang, Fang, Wang, Yao, Yang, Shengyuan A., Jiang, Jianzhong, Yang, Ming, Lu, Yunhao, Wang, Shijie, Feng, Yuanping
Formatua: Artigo
Hizkuntza:Inglês
Argitaratua: Nature Publishing Group UK 2017
Gaiak:
Article
Sarrera elektronikoa:https://ncbi.nlm.nih.gov/pmc/articles/PMC5451440/
https://ncbi.nlm.nih.gov/pubmed/28566756
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-017-02832-8
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