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The resonant interaction between anions or vacancies in ZnON semiconductors and their effects on thin film device properties
Zinc oxynitride (ZnON) semiconductors are suitable for high performance thin-film transistors (TFTs) with excellent device stability under negative bias illumination stress (NBIS). The present work provides a first approach on the optimization of electrical performance and stability of the TFTs via...
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| Publicado no: | Sci Rep |
|---|---|
| Main Authors: | , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group UK
2017
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5437099/ https://ncbi.nlm.nih.gov/pubmed/28522801 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-017-02336-5 |
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