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A new mechanism of voltage-dependent gating exposed by K(V)10.1 channels interrupted between voltage sensor and pore
Voltage-gated ion channels couple transmembrane potential changes to ion flow. Conformational changes in the voltage-sensing domain (VSD) of the channel are thought to be transmitted to the pore domain (PD) through an α-helical linker between them (S4–S5 linker). However, our recent work on channels...
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| Publicado no: | J Gen Physiol |
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| Main Authors: | , , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
The Rockefeller University Press
2017
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5412533/ https://ncbi.nlm.nih.gov/pubmed/28360219 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1085/jgp.201611742 |
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