Modulation Doping of Silicon using Aluminium-induced Acceptor States in Silicon Dioxide

All electronic, optoelectronic or photovoltaic applications of silicon depend on controlling majority charge carriers via doping with impurity atoms. Nanoscale silicon is omnipresent in fundamental research (quantum dots, nanowires) but also approached in future technology nodes of the microelectron...

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Publicado no:Sci Rep
Main Authors: König, Dirk, Hiller, Daniel, Gutsch, Sebastian, Zacharias, Margit, Smith, Sean
Formato: Artigo
Idioma:Inglês
Publicado em: Nature Publishing Group 2017
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Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC5397979/
https://ncbi.nlm.nih.gov/pubmed/28425460
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep46703
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spelling pubmed-53979792017-04-21 Modulation Doping of Silicon using Aluminium-induced Acceptor States in Silicon Dioxide König, Dirk Hiller, Daniel Gutsch, Sebastian Zacharias, Margit Smith, Sean Sci Rep Article All electronic, optoelectronic or photovoltaic applications of silicon depend on controlling majority charge carriers via doping with impurity atoms. Nanoscale silicon is omnipresent in fundamental research (quantum dots, nanowires) but also approached in future technology nodes of the microelectronics industry. In general, silicon nanovolumes, irrespective of their intended purpose, suffer from effects that impede conventional doping due to fundamental physical principles such as out-diffusion, statistics of small numbers, quantum- or dielectric confinement. In analogy to the concept of modulation doping, originally invented for III-V semiconductors, we demonstrate a heterostructure modulation doping method for silicon. Our approach utilizes a specific acceptor state of aluminium atoms in silicon dioxide to generate holes as majority carriers in adjacent silicon. By relocating the dopants from silicon to silicon dioxide, Si nanoscale doping problems are circumvented. In addition, the concept of aluminium-induced acceptor states for passivating hole selective tunnelling contacts as required for high-efficiency photovoltaics is presented and corroborated by first carrier lifetime and tunnelling current measurements. Nature Publishing Group 2017-04-20 /pmc/articles/PMC5397979/ /pubmed/28425460 http://dx.doi.org/10.1038/srep46703 Text en Copyright © 2017, The Author(s) http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
institution US NLM
collection PubMed Central
language Inglês
format Artigo
topic Article
spellingShingle Article
König, Dirk
Hiller, Daniel
Gutsch, Sebastian
Zacharias, Margit
Smith, Sean
Modulation Doping of Silicon using Aluminium-induced Acceptor States in Silicon Dioxide
description All electronic, optoelectronic or photovoltaic applications of silicon depend on controlling majority charge carriers via doping with impurity atoms. Nanoscale silicon is omnipresent in fundamental research (quantum dots, nanowires) but also approached in future technology nodes of the microelectronics industry. In general, silicon nanovolumes, irrespective of their intended purpose, suffer from effects that impede conventional doping due to fundamental physical principles such as out-diffusion, statistics of small numbers, quantum- or dielectric confinement. In analogy to the concept of modulation doping, originally invented for III-V semiconductors, we demonstrate a heterostructure modulation doping method for silicon. Our approach utilizes a specific acceptor state of aluminium atoms in silicon dioxide to generate holes as majority carriers in adjacent silicon. By relocating the dopants from silicon to silicon dioxide, Si nanoscale doping problems are circumvented. In addition, the concept of aluminium-induced acceptor states for passivating hole selective tunnelling contacts as required for high-efficiency photovoltaics is presented and corroborated by first carrier lifetime and tunnelling current measurements.
author König, Dirk
Hiller, Daniel
Gutsch, Sebastian
Zacharias, Margit
Smith, Sean
author_facet König, Dirk
Hiller, Daniel
Gutsch, Sebastian
Zacharias, Margit
Smith, Sean
author_sort König, Dirk
title Modulation Doping of Silicon using Aluminium-induced Acceptor States in Silicon Dioxide
title_short Modulation Doping of Silicon using Aluminium-induced Acceptor States in Silicon Dioxide
title_full Modulation Doping of Silicon using Aluminium-induced Acceptor States in Silicon Dioxide
title_fullStr Modulation Doping of Silicon using Aluminium-induced Acceptor States in Silicon Dioxide
title_full_unstemmed Modulation Doping of Silicon using Aluminium-induced Acceptor States in Silicon Dioxide
title_sort modulation doping of silicon using aluminium-induced acceptor states in silicon dioxide
publisher Nature Publishing Group
container_title Sci Rep
publishDate 2017
url https://ncbi.nlm.nih.gov/pmc/articles/PMC5397979/
https://ncbi.nlm.nih.gov/pubmed/28425460
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep46703
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