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Dislocation-pipe diffusion in nitride superlattices observed in direct atomic resolution

Device failure from diffusion short circuits in microelectronic components occurs via thermally induced migration of atoms along high-diffusivity paths: dislocations, grain boundaries, and free surfaces. Even well-annealed single-grain metallic films contain dislocation densities of about 10(14) m(−...

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Detalhes bibliográficos
Publicado no:Sci Rep
Principais autores: Garbrecht, Magnus, Saha, Bivas, Schroeder, Jeremy L., Hultman, Lars, Sands, Timothy D.
Formato: Artigo
Idioma:Inglês
Publicado em: Nature Publishing Group 2017
Assuntos:
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC5382674/
https://ncbi.nlm.nih.gov/pubmed/28382949
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep46092
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