Shock-Resistibility of MEMS-Based Inertial Microswitch under Reverse Directional Ultra-High g Acceleration for IoT Applications

This paper presents a novel MEMS-based inertial microswitch design with multi-directional compact constraint structures for improving the shock-resistibility. Its shock-resistibility in the reverse-sensitive direction to ultra-high g acceleration (~hunderds of thousands) is simulated and analyzed. T...

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Udgivet i:Sci Rep
Main Authors: Xu, Qiu, Yang, Zhuoqing, Sun, Yunna, Lai, Liyan, Jin, Zhiyu, Ding, Guifu, Zhao, Xiaolin, Yao, Jinyuan, Wang, Jing
Format: Artigo
Sprog:Inglês
Udgivet: Nature Publishing Group 2017
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Article
Online adgang:https://ncbi.nlm.nih.gov/pmc/articles/PMC5374543/
https://ncbi.nlm.nih.gov/pubmed/28361893
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep45512
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