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Shock-Resistibility of MEMS-Based Inertial Microswitch under Reverse Directional Ultra-High g Acceleration for IoT Applications
This paper presents a novel MEMS-based inertial microswitch design with multi-directional compact constraint structures for improving the shock-resistibility. Its shock-resistibility in the reverse-sensitive direction to ultra-high g acceleration (~hunderds of thousands) is simulated and analyzed. T...
Gorde:
| Argitaratua izan da: | Sci Rep |
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| Egile Nagusiak: | , , , , , , , , |
| Formatua: | Artigo |
| Hizkuntza: | Inglês |
| Argitaratua: |
Nature Publishing Group
2017
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| Gaiak: | |
| Sarrera elektronikoa: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5374543/ https://ncbi.nlm.nih.gov/pubmed/28361893 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep45512 |
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