Wavelength tunable InGaN/GaN nano-ring LEDs via nano-sphere lithography

In this research, nano-ring light-emitting diodes (NRLEDs) with different wall width (120 nm, 80 nm and 40 nm) were fabricated by specialized nano-sphere lithography technology. Through the thinned wall, the effective bandgaps of nano-ring LEDs can be precisely tuned by reducing the strain inside th...

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Vydáno v:Sci Rep
Hlavní autoři: Wang, Sheng-Wen, Hong, Kuo-Bin, Tsai, Yu-Lin, Teng, Chu-Hsiang, Tzou, An-Jye, Chu, You-Chen, Lee, Po-Tsung, Ku, Pei-Cheng, Lin, Chien-Chung, Kuo, Hao-Chung
Médium: Artigo
Jazyk:Inglês
Vydáno: Nature Publishing Group 2017
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Article
On-line přístup:https://ncbi.nlm.nih.gov/pmc/articles/PMC5335604/
https://ncbi.nlm.nih.gov/pubmed/28256529
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep42962
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