Significant improvements in InGaN/GaN nano-photoelectrodes for hydrogen generation by structure and polarization optimization

The photoelectrodes based on III-nitride semiconductors with high energy conversion efficiency especially for those self-driven ones are greatly desirable for hydrogen generation. In this study, highly ordered InGaN/GaN multiple-quantum-well nanorod-based photoelectrodes have been fabricated by a so...

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Publicat a:Sci Rep
Autors principals: Tao, Tao, Zhi, Ting, Liu, Bin, Li, Mingxue, Zhuang, Zhe, Dai, Jiangping, Li, Yi, Jiang, Fulong, Luo, Wenjun, Xie, Zili, Chen, Dunjun, Chen, Peng, Li, Zhaosheng, Zou, Zhigang, Zhang, Rong, Zheng, Youdou
Format: Artigo
Idioma:Inglês
Publicat: Nature Publishing Group 2016
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Article
Accés en línia:https://ncbi.nlm.nih.gov/pmc/articles/PMC4745013/
https://ncbi.nlm.nih.gov/pubmed/26853933
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep20218
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