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Significant improvements in InGaN/GaN nano-photoelectrodes for hydrogen generation by structure and polarization optimization
The photoelectrodes based on III-nitride semiconductors with high energy conversion efficiency especially for those self-driven ones are greatly desirable for hydrogen generation. In this study, highly ordered InGaN/GaN multiple-quantum-well nanorod-based photoelectrodes have been fabricated by a so...
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| Publicat a: | Sci Rep |
|---|---|
| Autors principals: | , , , , , , , , , , , , , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Nature Publishing Group
2016
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4745013/ https://ncbi.nlm.nih.gov/pubmed/26853933 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep20218 |
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