Dependence of GaN Exciton Energy on Temperature
In this paper, we investigate the relationship between GaN exciton energy and temperature by using high-quality, strain-free GaN epilayers. Traditional models, such as Varshni’s model and the Bose–Einstein model, are primarily based on empirical fitting and give little or no consideration to electro...
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| Hlavní autoři: | , , , , , , , , |
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| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
MDPI AG
2025-01-01
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| Edice: | Crystals |
| Témata: | |
| On-line přístup: | https://www.mdpi.com/2073-4352/15/2/137 |
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