Reverse Leakage Current Characteristics of GaN/InGaN Multiple Quantum-Wells Blue and Green Light-Emitting Diodes
The mechanisms of reverse leakage in InGaN/GaN multiple-quantum-wells (MQWs) blue and green light-emitting diodes (LEDs) were studied through analyzing the current–voltage (<italic>I–V</italic>) characteristics with the temperature ranging from 50 to 350 K. When the reverse bias...
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| Autors principals: | , , , , , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
IEEE
2016-01-01
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| Col·lecció: | IEEE Photonics Journal |
| Matèries: | |
| Accés en línia: | https://ieeexplore.ieee.org/document/7543527/ |
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