Enhancing reliability of InGaN/GaN light-emitting diodes by controlling the etching profile of the current blocking layer

SiO _2 was used as the current blocking layer (CBL) during fabricating the InGaN/GaN-based light-emitting diodes (LEDs). The SiO _2 film was prepared by plasma enhanced chemical vapor deposition (PECVD) at a lower temperature (LT) of 180 °C and a higher temperature (HT) of 280 °C for characterizing...

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Detalhes bibliográficos

Principais autores:	Shui-Hsiang Su, Chun-Lung Tseng, Ching-Hsing Shen, I-Jou Hsieh, Yen-Sheng Lin
Formato:	Artigo
Idioma:	Inglês
Publicado em:	IOP Publishing 2020-01-01
coleção:	Materials Research Express
Assuntos:	LED GaN current blocking layer
Acesso em linha:	https://doi.org/10.1088/2053-1591/ab7c84
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