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Strain-induced yellow to blue emission tailoring of axial InGaN/GaN quantum wells in GaN nanorods synthesized by nanoimprint lithography
GaN nanorods (NRds) with axial InGaN/GaN MQWs insertions are synthesized by an original cost-effective and large-scale nanoimprint-lithography process from an InGaN/GaN MQWs layer grown on c-sapphire substrates. By design, such NRds exhibit a single emission due to the c-axis MQWs. A systematic stud...
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| Publicado no: | Sci Rep |
|---|---|
| Main Authors: | , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group UK
2021
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7990954/ https://ncbi.nlm.nih.gov/pubmed/33762623 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-021-86139-9 |
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