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High-speed maskless nanolithography with visible light based on photothermal localization
High-speed maskless nanolithography is experimentally achieved on AgInSbTe thin films. The lithography was carried out in air at room temperature, with a GaN diode laser (λ = 405 nm), and on a large sample disk of diameter 120 mm. The normal width of the written features measures 46 ± 5 nm, about 1/...
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| Vydáno v: | Sci Rep |
|---|---|
| Hlavní autoři: | , , , , , |
| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
Nature Publishing Group
2017
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| Témata: | |
| On-line přístup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5333155/ https://ncbi.nlm.nih.gov/pubmed/28252011 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep43892 |
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