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High-speed maskless nanolithography with visible light based on photothermal localization

High-speed maskless nanolithography is experimentally achieved on AgInSbTe thin films. The lithography was carried out in air at room temperature, with a GaN diode laser (λ = 405 nm), and on a large sample disk of diameter 120 mm. The normal width of the written features measures 46 ± 5 nm, about 1/...

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Publicat a:Sci Rep
Autors principals: Wei, Jingsong, Zhang, Kui, Wei, Tao, Wang, Yang, Wu, Yiqun, Xiao, Mufei
Format: Artigo
Idioma:Inglês
Publicat: Nature Publishing Group 2017
Matèries:
Accés en línia:https://ncbi.nlm.nih.gov/pmc/articles/PMC5333155/
https://ncbi.nlm.nih.gov/pubmed/28252011
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep43892
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