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Effects of Annealing Temperature on Properties of Ti-Ga–Doped ZnO Films Deposited on Flexible Substrates
An investigation is performed into the optical, electrical, and microstructural properties of Ti-Ga–doped ZnO films deposited on polyimide (PI) flexible substrates and then annealed at temperatures of 300 °C, 400 °C, and 450 °C, respectively. The X-ray diffraction (XRD) analysis results show that al...
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| Publié dans: | Nanomaterials (Basel) |
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| Auteurs principaux: | , |
| Format: | Artigo |
| Langue: | Inglês |
| Publié: |
MDPI
2015
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| Sujets: | |
| Accès en ligne: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5304781/ https://ncbi.nlm.nih.gov/pubmed/28347098 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/nano5041831 |
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