Yüklüyor......
Core-shell homojunction silicon vertical nanowire tunneling field-effect transistors
We propose three-terminal core-shell (CS) silicon vertical nanowire tunneling field-effect transistors (TFETs), which can be fabricated by conventional CMOS technology. CS TFETs show lower subthreshold swing (SS) and higher on-state current than conventional TFETs through their high surface-to-volum...
Kaydedildi:
| Yayımlandı: | Sci Rep |
|---|---|
| Asıl Yazarlar: | , , |
| Materyal Türü: | Artigo |
| Dil: | Inglês |
| Baskı/Yayın Bilgisi: |
Nature Publishing Group
2017
|
| Konular: | |
| Online Erişim: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5255564/ https://ncbi.nlm.nih.gov/pubmed/28112273 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep41142 |
| Etiketler: |
Etiketle
Etiket eklenmemiş, İlk siz ekleyin!
|