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In-plane tunnelling field-effect transistor integrated on Silicon
Silicon has persevered as the primary substrate of microelectronics during last decades. During last years, it has been gradually embracing the integration of ferroelectricity and ferromagnetism. The successful incorporation of these two functionalities to silicon has delivered the desired non-volat...
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| Publicado no: | Sci Rep |
|---|---|
| Main Authors: | , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group
2015
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4585907/ https://ncbi.nlm.nih.gov/pubmed/26403693 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep14367 |
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