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Core-shell homojunction silicon vertical nanowire tunneling field-effect transistors
We propose three-terminal core-shell (CS) silicon vertical nanowire tunneling field-effect transistors (TFETs), which can be fabricated by conventional CMOS technology. CS TFETs show lower subthreshold swing (SS) and higher on-state current than conventional TFETs through their high surface-to-volum...
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| Publicado no: | Sci Rep |
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| Main Authors: | , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group
2017
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5255564/ https://ncbi.nlm.nih.gov/pubmed/28112273 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep41142 |
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