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Contact Resistance and Channel Conductance of Graphene Field-Effect Transistors under Low-Energy Electron Irradiation
We studied the effects of low-energy electron beam irradiation up to 10 keV on graphene-based field effect transistors. We fabricated metallic bilayer electrodes to contact mono- and bi-layer graphene flakes on SiO(2), obtaining specific contact resistivity [Formula: see text] and carrier mobility a...
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| Publicado en: | Nanomaterials (Basel) |
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| Main Authors: | , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado: |
MDPI
2016
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| Assuntos: | |
| Acceso en liña: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5245740/ https://ncbi.nlm.nih.gov/pubmed/28335335 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/nano6110206 |
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