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Photoluminescence quantum efficiency of Er optical centers in GaN epilayers

We report the quantum efficiency of photoluminescence processes of Er optical centers as well as the thermal quenching mechanism in GaN epilayers prepared by metal-organic chemical vapor deposition. High resolution infrared spectroscopy and temperature dependence measurements of photoluminescence in...

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Detalles Bibliográficos
Publicado en:Sci Rep
Main Authors: Ho, V. X., Dao, T. V., Jiang, H. X., Lin, J. Y., Zavada, J. M., McGill, S. A., Vinh, N. Q.
Formato: Artigo
Idioma:Inglês
Publicado: Nature Publishing Group 2017
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Acceso en liña:https://ncbi.nlm.nih.gov/pmc/articles/PMC5215594/
https://ncbi.nlm.nih.gov/pubmed/28054672
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep39997
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