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Rapid mapping of polarization switching through complete information acquisition
Polarization switching in ferroelectric and multiferroic materials underpins a broad range of current and emergent applications, ranging from random access memories to field-effect transistors, and tunnelling devices. Switching in these materials is exquisitely sensitive to local defects and microst...
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| Опубликовано в: : | Nat Commun |
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| Главные авторы: | , , , |
| Формат: | Artigo |
| Язык: | Inglês |
| Опубликовано: |
Nature Publishing Group
2016
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| Предметы: | |
| Online-ссылка: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5146286/ https://ncbi.nlm.nih.gov/pubmed/27910941 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/ncomms13290 |
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