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Rapid mapping of polarization switching through complete information acquisition
Polarization switching in ferroelectric and multiferroic materials underpins a broad range of current and emergent applications, ranging from random access memories to field-effect transistors, and tunnelling devices. Switching in these materials is exquisitely sensitive to local defects and microst...
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| Publié dans: | Nat Commun |
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| Auteurs principaux: | , , , |
| Format: | Artigo |
| Langue: | Inglês |
| Publié: |
Nature Publishing Group
2016
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| Sujets: | |
| Accès en ligne: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5146286/ https://ncbi.nlm.nih.gov/pubmed/27910941 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/ncomms13290 |
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