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Determination of the electron-capture coefficients and the concentration of free electrons in GaN from time-resolved photoluminescence
Point defects in high-purity GaN layers grown by hydride vapor phase epitaxy are studied by steady-state and time-resolved photoluminescence (PL). The electron-capture coefficients for defects responsible for the dominant defect-related PL bands in this material are found. The capture coefficients f...
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| Publicado no: | Sci Rep |
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| Main Authors: | , , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group
2016
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5128818/ https://ncbi.nlm.nih.gov/pubmed/27901025 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep37511 |
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