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Realisation of magnetically and atomically abrupt half-metal/semiconductor interface: Co(2)FeSi(0.5)Al(0.5)/Ge(111)

Halfmetal-semiconductor interfaces are crucial for hybrid spintronic devices. Atomically sharp interfaces with high spin polarisation are required for efficient spin injection. In this work we show that thin film of half-metallic full Heusler alloy Co(2)FeSi(0.5)Al(0.5) with uniform thickness and B2...

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Dettagli Bibliografici
Pubblicato in:Sci Rep
Autori principali: Nedelkoski, Zlatko, Kuerbanjiang, Balati, Glover, Stephanie E., Sanchez, Ana M., Kepaptsoglou, Demie, Ghasemi, Arsham, Burrows, Christopher W., Yamada, Shinya, Hamaya, Kohei, Ramasse, Quentin M., Hasnip, Philip J., Hase, Thomas, Bell, Gavin R., Hirohata, Atsufumi, Lazarov, Vlado K.
Natura: Artigo
Lingua:Inglês
Pubblicazione: Nature Publishing Group 2016
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Accesso online:https://ncbi.nlm.nih.gov/pmc/articles/PMC5116668/
https://ncbi.nlm.nih.gov/pubmed/27869132
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep37282
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