Realisation of magnetically and atomically abrupt half-metal/semiconductor interface: Co(2)FeSi(0.5)Al(0.5)/Ge(111)

Halfmetal-semiconductor interfaces are crucial for hybrid spintronic devices. Atomically sharp interfaces with high spin polarisation are required for efficient spin injection. In this work we show that thin film of half-metallic full Heusler alloy Co(2)FeSi(0.5)Al(0.5) with uniform thickness and B2...

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Détails bibliographiques
Publié dans:Sci Rep
Auteurs principaux: Nedelkoski, Zlatko, Kuerbanjiang, Balati, Glover, Stephanie E., Sanchez, Ana M., Kepaptsoglou, Demie, Ghasemi, Arsham, Burrows, Christopher W., Yamada, Shinya, Hamaya, Kohei, Ramasse, Quentin M., Hasnip, Philip J., Hase, Thomas, Bell, Gavin R., Hirohata, Atsufumi, Lazarov, Vlado K.
Format: Artigo
Langue:Inglês
Publié: Nature Publishing Group 2016
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Article
Accès en ligne:https://ncbi.nlm.nih.gov/pmc/articles/PMC5116668/
https://ncbi.nlm.nih.gov/pubmed/27869132
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep37282
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