Realisation of magnetically and atomically abrupt half-metal/semiconductor interface: Co(2)FeSi(0.5)Al(0.5)/Ge(111)

Halfmetal-semiconductor interfaces are crucial for hybrid spintronic devices. Atomically sharp interfaces with high spin polarisation are required for efficient spin injection. In this work we show that thin film of half-metallic full Heusler alloy Co(2)FeSi(0.5)Al(0.5) with uniform thickness and B2...

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Publicat a:Sci Rep
Autors principals: Nedelkoski, Zlatko, Kuerbanjiang, Balati, Glover, Stephanie E., Sanchez, Ana M., Kepaptsoglou, Demie, Ghasemi, Arsham, Burrows, Christopher W., Yamada, Shinya, Hamaya, Kohei, Ramasse, Quentin M., Hasnip, Philip J., Hase, Thomas, Bell, Gavin R., Hirohata, Atsufumi, Lazarov, Vlado K.
Format: Artigo
Idioma:Inglês
Publicat: Nature Publishing Group 2016
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Article
Accés en línia:https://ncbi.nlm.nih.gov/pmc/articles/PMC5116668/
https://ncbi.nlm.nih.gov/pubmed/27869132
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep37282
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