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Realisation of magnetically and atomically abrupt half-metal/semiconductor interface: Co(2)FeSi(0.5)Al(0.5)/Ge(111)
Halfmetal-semiconductor interfaces are crucial for hybrid spintronic devices. Atomically sharp interfaces with high spin polarisation are required for efficient spin injection. In this work we show that thin film of half-metallic full Heusler alloy Co(2)FeSi(0.5)Al(0.5) with uniform thickness and B2...
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| Publicat a: | Sci Rep |
|---|---|
| Autors principals: | , , , , , , , , , , , , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Nature Publishing Group
2016
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5116668/ https://ncbi.nlm.nih.gov/pubmed/27869132 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep37282 |
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