Electrical isolation of dislocations in Ge layers on Si(001) substrates through CMOS-compatible suspended structures

Suspended crystalline Ge semiconductor structures are created on a Si(001) substrate by a combination of epitaxial growth and simple patterning from the front surface using anisotropic underetching. Geometric definition of the surface Ge layer gives access to a range of crystalline planes that have...

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Vydáno v:Sci Technol Adv Mater
Hlavní autoři: Shah, Vishal Ajit, Myronov, Maksym, Wongwanitwatana, Chalermwat, Bawden, Lewis, Prest, Martin J, Richardson-Bullock, James S, Rhead, Stephen, Parker, Evan H C, Whall, Terrance E, Leadley, David R
Médium: Artigo
Jazyk:Inglês
Vydáno: Taylor & Francis 2012
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Papers
On-line přístup:https://ncbi.nlm.nih.gov/pmc/articles/PMC5099624/
https://ncbi.nlm.nih.gov/pubmed/27877523
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1088/1468-6996/13/5/055002
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